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MegaMOS TM FET
V DSS
I D25
R DS(on)
N-Channel Enhancement Mode
IXTH / IXTM 21N50
IXTH / IXTM 24N50
500 V
500 V
21 A 0.25 ?
24 A 0.23 ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
D (TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
21N50
24N50
21N50
21
24
84
A
A
A
TO-204 AE (IXTM)
24N50
96
A
P D
T C = 25 ° C
300
W
T J
T JM
-55 ... +150
150
° C
° C
D
G
T stg
-55 ... +150
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Applications
min. typ. max.
Switch-mode and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
500
2
4
± 100
200
1
V
V
nA
μ A
mA
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
V GS = 10 V, I D = 0.5 I D25
R DS(on)
21N50
24N50
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.25
0.23
?
?
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
91536F(5/97)
1-4
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相关代理商/技术参数
IXTH24N50 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH24N50L 功能描述:MOSFET 24 Amps 500V 0.30 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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